MMBT4400 Overview
In this device, the DC current gain is 50 @ 150mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 750mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A breakdown input voltage of 40V volts can be used.A maximum collector current of 600mA volts can be achieved.
MMBT4400 Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
MMBT4400 Applications
There are a lot of ON Semiconductor MMBT4400 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
