KSE45H11 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 2A 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -10A current rating.As a result, the part has a transition frequency of 40MHz.Input voltage breakdown is available at 60V volts.The maximum collector current is 10A volts.
KSE45H11 Features
the DC current gain for this device is 60 @ 2A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 40MHz
KSE45H11 Applications
There are a lot of ON Semiconductor KSE45H11 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
