KSE45H11 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSE45H11 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
1.67W
Current Rating
-10A
Frequency
40MHz
Base Part Number
KSE45H
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.67W
Transistor Application
SWITCHING
Gain Bandwidth Product
40MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2A 1V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
-1V
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-5V
hFE Min
60
VCEsat-Max
1 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.735676
$0.735676
10
$0.694034
$6.94034
100
$0.654749
$65.4749
500
$0.617689
$308.8445
1000
$0.582724
$582.724
KSE45H11 Product Details
KSE45H11 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 2A 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -10A current rating.As a result, the part has a transition frequency of 40MHz.Input voltage breakdown is available at 60V volts.The maximum collector current is 10A volts.
KSE45H11 Features
the DC current gain for this device is 60 @ 2A 1V a collector emitter saturation voltage of -1V the vce saturation(Max) is 1V @ 400mA, 8A the emitter base voltage is kept at -5V the current rating of this device is -10A a transition frequency of 40MHz
KSE45H11 Applications
There are a lot of ON Semiconductor KSE45H11 applications of single BJT transistors.