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KSE45H11

KSE45H11

KSE45H11

ON Semiconductor

KSE45H11 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSE45H11 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 1.67W
Current Rating -10A
Frequency 40MHz
Base Part Number KSE45H
Number of Elements 1
Element Configuration Single
Power Dissipation 1.67W
Transistor Application SWITCHING
Gain Bandwidth Product 40MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A 1V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage -1V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 60
VCEsat-Max 1 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.735676 $0.735676
10 $0.694034 $6.94034
100 $0.654749 $65.4749
500 $0.617689 $308.8445
1000 $0.582724 $582.724
KSE45H11 Product Details

KSE45H11 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 2A 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -10A current rating.As a result, the part has a transition frequency of 40MHz.Input voltage breakdown is available at 60V volts.The maximum collector current is 10A volts.

KSE45H11 Features


the DC current gain for this device is 60 @ 2A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 40MHz

KSE45H11 Applications


There are a lot of ON Semiconductor KSE45H11 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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