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KSC1009YTA

KSC1009YTA

KSC1009YTA

ON Semiconductor

KSC1009YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC1009YTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 140V
Max Power Dissipation 800mW
Terminal Position BOTTOM
Current Rating 700mA
Frequency 50MHz
Base Part Number KSC1009
Number of Elements 1
Element Configuration Single
Power Dissipation 800mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 20mA, 200mA
Collector Emitter Breakdown Voltage 140V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 140V
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 8V
hFE Min 40
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.04854 $0.09708
6,000 $0.04221 $0.25326
10,000 $0.03588 $0.3588
50,000 $0.03166 $1.583
100,000 $0.02814 $2.814
KSC1009YTA Product Details

KSC1009YTA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 50mA 2V.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 20mA, 200mA.The emitter base voltage can be kept at 8V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (700mA).As you can see, the part has a transition frequency of 50MHz.An input voltage of 140V volts is the breakdown voltage.Maximum collector currents can be below 700mA volts.

KSC1009YTA Features


the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 700mV @ 20mA, 200mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz

KSC1009YTA Applications


There are a lot of ON Semiconductor KSC1009YTA applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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