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BUL3N7

BUL3N7

BUL3N7

STMicroelectronics

Bipolar Transistors - BJT MEDIUM Vltg PNP Pwr TRANSISTOR

SOT-23

BUL3N7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 60W
Base Part Number BUL3N7
Pin Count 3
Number of Elements 1
Element Configuration Single
Power - Max 60W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 18 @ 700mA 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 1A
Collector Emitter Breakdown Voltage 400V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 10V
hFE Min 10
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.36750 $1.1025

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