KSH44H11TM Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 50MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

KSH44H11TM Features

the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz

KSH44H11TM Applications

There are a lot of ON Semiconductor KSH44H11TM applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver