KSH45H11ITU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.The collector emitter saturation voltage is -1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at -5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 40MHz.In extreme cases, the collector current can be as low as 8A volts.
KSH45H11ITU Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
KSH45H11ITU Applications
There are a lot of ON Semiconductor KSH45H11ITU applications of single BJT transistors.
- Inverter
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- Driver
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- Muting
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- Interface
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