KSP2222ATF Overview

This device has a DC current gain of 100 @ 150mA 10mV, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 300MHz.Input voltage breakdown is available at 40V volts.When collector current reaches its maximum, it can reach 600mA volts.

KSP2222ATF Features

the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz

KSP2222ATF Applications

There are a lot of ON Semiconductor KSP2222ATF applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver