KST2907AMTF Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -1.6V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.This device has a current rating of -600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.200MHz is present in the transition frequency.A breakdown input voltage of 25V volts can be used.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
KST2907AMTF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
KST2907AMTF Applications
There are a lot of ON Semiconductor KST2907AMTF applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
