MCH3145-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MCH3145-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 330mV @ 50mA, 1A
the emitter base voltage is kept at 6V
MCH3145-TL-E Applications
There are a lot of ON Semiconductor MCH3145-TL-E applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
