BCW68HVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCW68HVL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Pin Count
3
Power - Max
250mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
800mA
Frequency - Transition
80MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.178893
$0.178893
10
$0.168767
$1.68767
100
$0.159214
$15.9214
500
$0.150201
$75.1005
1000
$0.141700
$141.7
BCW68HVL Product Details
BCW68HVL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.When VCE saturation is 450mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BCW68HVL Features
the DC current gain for this device is 250 @ 100mA 1V the vce saturation(Max) is 450mV @ 50mA, 500mA
BCW68HVL Applications
There are a lot of Nexperia USA Inc. BCW68HVL applications of single BJT transistors.