MJB45H11 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJB45H11 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2009
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn80Pb20)
HTS Code
8541.29.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-10A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MJB45H11
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
1V
Frequency - Transition
40MHz
Collector Base Voltage (VCBO)
5V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MJB45H11 Product Details
MJB45H11 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 40MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
MJB45H11 Features
the DC current gain for this device is 40 @ 4A 1V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 400mA, 8A the emitter base voltage is kept at 5V the current rating of this device is -10A a transition frequency of 40MHz
MJB45H11 Applications
There are a lot of ON Semiconductor MJB45H11 applications of single BJT transistors.