MJD112T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD112T4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
2A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MJD112
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
20W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A 3V
Current - Collector Cutoff (Max)
20μA
Vce Saturation (Max) @ Ib, Ic
2V @ 8mA, 2A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
25MHz
Collector Emitter Saturation Voltage
2V
Max Breakdown Voltage
100V
Frequency - Transition
25MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
2A
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.28806
$0.57612
5,000
$0.26819
$1.34095
12,500
$0.26488
$3.17856
MJD112T4 Product Details
MJD112T4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 2A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 8mA, 2A.For high efficiency, the continuous collector voltage must be kept at 2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.In this part, there is a transition frequency of 25MHz.Breakdown input voltage is 100V volts.Collector current can be as low as 2A volts at its maximum.
MJD112T4 Features
the DC current gain for this device is 1000 @ 2A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 8mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 2A a transition frequency of 25MHz
MJD112T4 Applications
There are a lot of ON Semiconductor MJD112T4 applications of single BJT transistors.