MJD112T4 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 2A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 8mA, 2A.For high efficiency, the continuous collector voltage must be kept at 2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.In this part, there is a transition frequency of 25MHz.Breakdown input voltage is 100V volts.Collector current can be as low as 2A volts at its maximum.

MJD112T4 Features

the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz

MJD112T4 Applications

There are a lot of ON Semiconductor MJD112T4 applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface