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NSVBC848BWT1G

  • NSVBC848BWT1G
  • NSVBC848BWT1G

NSVBC848BWT1G

NSVBC848BWT1G

ON Semiconductor

NSVBC848BWT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVBC848BWT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Power - Max 200mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.246475 $0.246475
10 $0.232523 $2.32523
100 $0.219361 $21.9361
500 $0.206945 $103.4725
1000 $0.195231 $195.231
NSVBC848BWT1G Product Details

NSVBC848BWT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In extreme cases, the collector current can be as low as 100mA volts.

NSVBC848BWT1G Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA

NSVBC848BWT1G Applications


There are a lot of ON Semiconductor NSVBC848BWT1G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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