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BC857BLP-7

BC857BLP-7

BC857BLP-7

Diodes Incorporated

BC857BLP-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC857BLP-7 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 250mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC857BLP
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Case Connection COLLECTOR
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 650mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 220
Height 1.5mm
Length 1mm
Width 600μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.08050 $0.2415
6,000 $0.07315 $0.4389
15,000 $0.06580 $0.987
30,000 $0.06213 $1.8639
75,000 $0.05600 $4.2
BC857BLP-7 Product Details

BC857BLP-7 Overview


In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 650mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC857BLP-7 Features


the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz

BC857BLP-7 Applications


There are a lot of Diodes Incorporated BC857BLP-7 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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