BC817-16LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.Parts of this part have transition frequencies of 100MHz.The breakdown input voltage is 45V volts.Collector current can be as low as 500mA volts at its maximum.
BC817-16LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
BC817-16LT1G Applications
There are a lot of ON Semiconductor BC817-16LT1G applications of single BJT transistors.
- Inverter
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- Muting
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- Driver
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- Interface
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