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BC817-16LT1G

BC817-16LT1G

BC817-16LT1G

ON Semiconductor

BC817-16LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC817-16LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC817
Pin Count 3
Output Voltage 15V
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 700mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 940μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.044760 $0.04476
500 $0.032912 $16.456
1000 $0.027426 $27.426
2000 $0.025162 $50.324
5000 $0.023516 $117.58
10000 $0.021875 $218.75
15000 $0.021156 $317.34
50000 $0.020802 $1040.1
BC817-16LT1G Product Details

BC817-16LT1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.Parts of this part have transition frequencies of 100MHz.The breakdown input voltage is 45V volts.Collector current can be as low as 500mA volts at its maximum.

BC817-16LT1G Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz

BC817-16LT1G Applications


There are a lot of ON Semiconductor BC817-16LT1G applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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