MJD350TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD350TF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
1.56W
Terminal Form
GULL WING
Current Rating
-500mA
Base Part Number
MJD350
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
100μA
Collector Emitter Breakdown Voltage
300V
Transition Frequency
3MHz
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
-300V
Emitter Base Voltage (VEBO)
-3V
hFE Min
30
Height
2.3mm
Length
6.6mm
Width
6.1mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.250428
$0.250428
10
$0.236253
$2.36253
100
$0.222880
$22.288
500
$0.210264
$105.132
1000
$0.198362
$198.362
MJD350TF Product Details
MJD350TF Overview
This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the collector current and the base current.If the emitter base voltage is kept at -3V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).The part has a transition frequency of 3MHz.There is a breakdown input voltage of 300V volts that it can take.When collector current reaches its maximum, it can reach 500mA volts.
MJD350TF Features
the DC current gain for this device is 30 @ 50mA 10V the emitter base voltage is kept at -3V the current rating of this device is -500mA a transition frequency of 3MHz
MJD350TF Applications
There are a lot of ON Semiconductor MJD350TF applications of single BJT transistors.