MJD41CT4G Overview

This device has a DC current gain of 15 @ 3A 4V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is 6A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.3MHz is present in the transition frequency.Input voltage breakdown is available at 100V volts.Maximum collector currents can be below 6A volts.

MJD41CT4G Features

the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz

MJD41CT4G Applications

There are a lot of ON Semiconductor MJD41CT4G applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter