MMBT2222AT-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website
SOT-23
MMBT2222AT-TP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
SOT-523
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
MMBT2222A
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
150mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
300MHz
Frequency - Transition
300MHz
Power Dissipation-Max (Abs)
0.35W
Turn Off Time-Max (toff)
285ns
Turn On Time-Max (ton)
35ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.059512
$0.059512
500
$0.043758
$21.879
1000
$0.036465
$36.465
2000
$0.033455
$66.91
5000
$0.031265
$156.325
10000
$0.029085
$290.85
15000
$0.028128
$421.92
50000
$0.027658
$1382.9
MMBT2222AT-TP Product Details
MMBT2222AT-TP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 10mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MMBT2222AT-TP Features
the DC current gain for this device is 75 @ 10mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA a transition frequency of 300MHz
MMBT2222AT-TP Applications
There are a lot of Micro Commercial Co MMBT2222AT-TP applications of single BJT transistors.