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MJD44H11-001

MJD44H11-001

MJD44H11-001

ON Semiconductor

MJD44H11-001 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD44H11-001 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1.75W
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 8A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MJD44H11
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 85MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 85MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 5V
Emitter Base Voltage (VEBO) 5V
hFE Min 60
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
MJD44H11-001 Product Details

MJD44H11-001 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.85MHz is present in the transition frequency.A maximum collector current of 8A volts can be achieved.

MJD44H11-001 Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 85MHz

MJD44H11-001 Applications


There are a lot of ON Semiconductor MJD44H11-001 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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