MMBT2369LT1G Overview

This device has a DC current gain of 40 @ 10mA 350mV, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 1mA, 10mA.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 200mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 500MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.Maximum collector currents can be below 200mA volts.

MMBT2369LT1G Features

the DC current gain for this device is 40 @ 10mA 350mV
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz

MMBT2369LT1G Applications

There are a lot of ON Semiconductor MMBT2369LT1G applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting