MMBT2369LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT2369LT1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
15V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBT2369
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Power - Max
225mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 350mV
Current - Collector Cutoff (Max)
400nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
15V
Transition Frequency
500MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
15V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
4.5V
hFE Min
40
Height
940μm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.079908
$0.079908
500
$0.058756
$29.378
1000
$0.048964
$48.964
2000
$0.044921
$89.842
5000
$0.041982
$209.91
10000
$0.039053
$390.53
15000
$0.037769
$566.535
50000
$0.037137
$1856.85
MMBT2369LT1G Product Details
MMBT2369LT1G Overview
This device has a DC current gain of 40 @ 10mA 350mV, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 1mA, 10mA.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 200mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 500MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.Maximum collector currents can be below 200mA volts.
MMBT2369LT1G Features
the DC current gain for this device is 40 @ 10mA 350mV a collector emitter saturation voltage of 250mV the vce saturation(Max) is 250mV @ 1mA, 10mA the emitter base voltage is kept at 4.5V the current rating of this device is 200mA a transition frequency of 500MHz
MMBT2369LT1G Applications
There are a lot of ON Semiconductor MMBT2369LT1G applications of single BJT transistors.