2SB1121S-TD-E Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 2V DC current gain.With a collector emitter saturation voltage of -600mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 75mA, 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Collector current can be as low as 2A volts at its maximum.

2SB1121S-TD-E Features

the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V

2SB1121S-TD-E Applications

There are a lot of ON Semiconductor 2SB1121S-TD-E applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter