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2SB1121S-TD-E

2SB1121S-TD-E

2SB1121S-TD-E

ON Semiconductor

2SB1121S-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SB1121S-TD-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Element Configuration Single
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage 25V
Max Frequency 150MHz
Collector Emitter Saturation Voltage -600mV
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
Height 1.5mm
Length 4.5mm
Width 2.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.053600 $0.0536
500 $0.039412 $19.706
1000 $0.032843 $32.843
2000 $0.030131 $60.262
5000 $0.028160 $140.8
10000 $0.026195 $261.95
15000 $0.025334 $380.01
50000 $0.024911 $1245.55
2SB1121S-TD-E Product Details

2SB1121S-TD-E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 2V DC current gain.With a collector emitter saturation voltage of -600mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 75mA, 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Collector current can be as low as 2A volts at its maximum.

2SB1121S-TD-E Features


the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V

2SB1121S-TD-E Applications


There are a lot of ON Semiconductor 2SB1121S-TD-E applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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