MJD45H11TF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at -5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -8A.In this part, there is a transition frequency of 40MHz.An input voltage of 80V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 8A volts.

MJD45H11TF Features

the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz

MJD45H11TF Applications

There are a lot of ON Semiconductor MJD45H11TF applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter