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MJD6039T4

MJD6039T4

MJD6039T4

ON Semiconductor

MJD6039T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD6039T4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 4A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MJD6039
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 20W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 2A 4V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Collector Emitter Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.056400 $0.0564
500 $0.041471 $20.7355
1000 $0.034559 $34.559
2000 $0.031705 $63.41
5000 $0.029631 $148.155
10000 $0.027564 $275.64
15000 $0.026658 $399.87
50000 $0.026212 $1310.6
MJD6039T4 Product Details

MJD6039T4 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 500 @ 2A 4V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.When collector current reaches its maximum, it can reach 4A volts.

MJD6039T4 Features


the DC current gain for this device is 500 @ 2A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A

MJD6039T4 Applications


There are a lot of ON Semiconductor MJD6039T4 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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