MJE15031G Overview

This device has a DC current gain of 20 @ 4A 2V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Emitter base voltages of 5V can achieve high levels of efficiency.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 30MHz.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

MJE15031G Features

the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 30MHz

MJE15031G Applications

There are a lot of ON Semiconductor MJE15031G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface