2SC2712-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SC2712-GR,LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
125°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
150mW
Reach Compliance Code
unknown
Base Part Number
2SC2712
Element Configuration
Single
Power - Max
150mW
Gain Bandwidth Product
80MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
100mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.014143
$0.014143
500
$0.010400
$5.2
1000
$0.008666
$8.666
2000
$0.007951
$15.902
5000
$0.007431
$37.155
10000
$0.006912
$69.12
15000
$0.006685
$100.275
50000
$0.006573
$328.65
2SC2712-GR,LF Product Details
2SC2712-GR,LF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 2mA 6V DC current gain.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 150mA volts at its maximum.
2SC2712-GR,LF Features
the DC current gain for this device is 70 @ 2mA 6V a collector emitter saturation voltage of 100mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 5V
2SC2712-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SC2712-GR,LF applications of single BJT transistors.