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2SC4081U3T106Q

2SC4081U3T106Q

2SC4081U3T106Q

ROHM Semiconductor

2SC4081U3T106Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC4081U3T106Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 180MHz
RoHS StatusROHS3 Compliant
In-Stock:35777 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.164842$0.164842
10$0.155511$1.55511
100$0.146708$14.6708
500$0.138404$69.202
1000$0.130570$130.57

2SC4081U3T106Q Product Details

2SC4081U3T106Q Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.This device displays a 50V maximum voltage - Collector Emitter Breakdown.

2SC4081U3T106Q Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA

2SC4081U3T106Q Applications


There are a lot of ROHM Semiconductor 2SC4081U3T106Q applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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