MJE5742G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJE5742G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 21 hours ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
907.18474mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
2W
Peak Reflow Temperature (Cel)
260
Current Rating
8A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2A 5V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 400mA, 8A
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
2V
Emitter Base Voltage (VEBO)
8V
Continuous Collector Current
8A
Height
15.748mm
Length
10.2616mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.56000
$1.56
50
$1.32380
$66.19
100
$1.12790
$112.79
500
$0.92666
$463.33
1,000
$0.76780
$0.7678
MJE5742G Product Details
MJE5742G Overview
In this device, the DC current gain is 200 @ 2A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 400mA, 8A.Continuous collector voltages should be kept at 8A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The maximum collector current is 8A volts.
MJE5742G Features
the DC current gain for this device is 200 @ 2A 5V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 400mA, 8A the emitter base voltage is kept at 8V the current rating of this device is 8A
MJE5742G Applications
There are a lot of ON Semiconductor MJE5742G applications of single BJT transistors.