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MJE5742G

MJE5742G

MJE5742G

ON Semiconductor

MJE5742G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE5742G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Weight 907.18474mg
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation2W
Peak Reflow Temperature (Cel) 260
Current Rating8A
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A 5V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 400mA, 8A
Collector Emitter Breakdown Voltage400V
Collector Emitter Saturation Voltage2V
Emitter Base Voltage (VEBO) 8V
Continuous Collector Current 8A
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3796 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.56000$1.56
50$1.32380$66.19
100$1.12790$112.79
500$0.92666$463.33

MJE5742G Product Details

MJE5742G Overview


In this device, the DC current gain is 200 @ 2A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 400mA, 8A.Continuous collector voltages should be kept at 8A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The maximum collector current is 8A volts.

MJE5742G Features


the DC current gain for this device is 200 @ 2A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 400mA, 8A
the emitter base voltage is kept at 8V
the current rating of this device is 8A

MJE5742G Applications


There are a lot of ON Semiconductor MJE5742G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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