NJVMJD50T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In the part, the transition frequency is 10MHz.When collector current reaches its maximum, it can reach 1A volts.
NJVMJD50T4G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 10MHz
NJVMJD50T4G Applications
There are a lot of ON Semiconductor NJVMJD50T4G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
