NJVMJD50T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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NJVMJD50T4G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.56W
Terminal Form
GULL WING
Frequency
10MHz
Base Part Number
MJD50
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
10MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA 10V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.23599
$0.47198
5,000
$0.22076
$1.1038
12,500
$0.20554
$2.46648
25,000
$0.20300
$5.075
NJVMJD50T4G Product Details
NJVMJD50T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In the part, the transition frequency is 10MHz.When collector current reaches its maximum, it can reach 1A volts.
NJVMJD50T4G Features
the DC current gain for this device is 30 @ 300mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 200mA, 1A the emitter base voltage is kept at 5V a transition frequency of 10MHz
NJVMJD50T4G Applications
There are a lot of ON Semiconductor NJVMJD50T4G applications of single BJT transistors.