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MJF18004G

MJF18004G

MJF18004G

ON Semiconductor

MJF18004G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJF18004G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2006
Series SWITCHMODE™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureUL RECOGNIZED
Subcategory Other Transistors
Voltage - Rated DC 450V
Max Power Dissipation35W
Peak Reflow Temperature (Cel) 260
Current Rating5A
Frequency 13MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation280mW
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product13MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 450V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 300mA 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 750mV @ 500mA, 2.5A
Collector Emitter Breakdown Voltage450V
Transition Frequency 13MHz
Collector Emitter Saturation Voltage920mV
Collector Base Voltage (VCBO) 1kV
Emitter Base Voltage (VEBO) 9V
hFE Min 12
Isolation Voltage2kV
Height 9.24mm
Length 10.63mm
Width 4.9mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3985 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.60000$1.6
50$1.35560$67.78
100$1.15490$115.49
500$0.94888$474.44

MJF18004G Product Details

MJF18004G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 14 @ 300mA 5V DC current gain.With a collector emitter saturation voltage of 920mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 500mA, 2.5A.Keeping the emitter base voltage at 9V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.As a result, the part has a transition frequency of 13MHz.Maximum collector currents can be below 5A volts.

MJF18004G Features


the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 750mV @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 13MHz

MJF18004G Applications


There are a lot of ON Semiconductor MJF18004G applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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