MJF31CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJF31CG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
UL RECOGNIZED
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
2W
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
16.12mm
Length
10.63mm
Width
4.9mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.10000
$1.1
50
$0.93000
$46.5
100
$0.76390
$76.39
500
$0.63102
$315.51
1,000
$0.49817
$0.49817
MJF31CG Product Details
MJF31CG Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.2V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 3MHz.The maximum collector current is 3A volts.
MJF31CG Features
the DC current gain for this device is 10 @ 3A 4V a collector emitter saturation voltage of 1.2V the vce saturation(Max) is 1.2V @ 375mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 3A a transition frequency of 3MHz
MJF31CG Applications
There are a lot of ON Semiconductor MJF31CG applications of single BJT transistors.