2SC5200-O(Q) Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1A 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 800mA, 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.

2SC5200-O(Q) Features

the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 15A

2SC5200-O(Q) Applications

There are a lot of Toshiba Semiconductor and Storage 2SC5200-O(Q) applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface