MJ21196G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJ21196G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Number of Pins
2
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
250V
Max Power Dissipation
250W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Current Rating
16A
Frequency
4MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
2
Number of Elements
1
Element Configuration
Single
Power Dissipation
250W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
16A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 8A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
1.4V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.46000
$7.46
10
$6.74300
$67.43
100
$5.58290
$558.29
500
$4.86150
$2430.75
1,000
$4.23421
$4.23421
MJ21196G Product Details
MJ21196G Overview
DC current gain in this device equals 25 @ 8A 5V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 1.4V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 3.2A, 16A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 16A for this device.Parts of this part have transition frequencies of 4MHz.In extreme cases, the collector current can be as low as 16A volts.
MJ21196G Features
the DC current gain for this device is 25 @ 8A 5V a collector emitter saturation voltage of 1.4V the vce saturation(Max) is 4V @ 3.2A, 16A the emitter base voltage is kept at 5V the current rating of this device is 16A a transition frequency of 4MHz
MJ21196G Applications
There are a lot of ON Semiconductor MJ21196G applications of single BJT transistors.