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MJ21196G

MJ21196G

MJ21196G

ON Semiconductor

MJ21196G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJ21196G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface Mount NO
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 250V
Max Power Dissipation 250W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating 16A
Frequency 4MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 8A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage 250V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 1.4V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.46000 $7.46
10 $6.74300 $67.43
100 $5.58290 $558.29
500 $4.86150 $2430.75
1,000 $4.23421 $4.23421
MJ21196G Product Details

MJ21196G Overview


DC current gain in this device equals 25 @ 8A 5V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 1.4V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 3.2A, 16A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 16A for this device.Parts of this part have transition frequencies of 4MHz.In extreme cases, the collector current can be as low as 16A volts.

MJ21196G Features


the DC current gain for this device is 25 @ 8A 5V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz

MJ21196G Applications


There are a lot of ON Semiconductor MJ21196G applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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