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MJL21193G

MJL21193G

MJL21193G

ON Semiconductor

MJL21193G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJL21193G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1995
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -250V
Max Power Dissipation200W
Peak Reflow Temperature (Cel) 260
Current Rating-16A
Frequency 4MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Case Connection ISOLATED
Transistor Application AMPLIFIER
Gain Bandwidth Product4MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 8A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage250V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage1.4V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 29mm
Length 20.3mm
Width 5.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1118 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.01000$5.01
25$4.25240$106.31
100$3.68550$368.55
500$3.13740$1568.7

MJL21193G Product Details

MJL21193G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 8A 5V DC current gain.As it features a collector emitter saturation voltage of 1.4V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 3.2A, 16A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -16A.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.A maximum collector current of 16A volts is possible.

MJL21193G Features


the DC current gain for this device is 25 @ 8A 5V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is -16A
a transition frequency of 4MHz

MJL21193G Applications


There are a lot of ON Semiconductor MJL21193G applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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