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2SD1816T-H

2SD1816T-H

2SD1816T-H

Rochester Electronics, LLC

2SD1816T-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2SD1816T-H Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 4A
Frequency - Transition 180MHz
RoHS StatusROHS3 Compliant
In-Stock:25518 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.25000$0.25
500$0.2475$123.75
1000$0.245$245
1500$0.2425$363.75
2000$0.24$480
2500$0.2375$593.75

2SD1816T-H Product Details

2SD1816T-H Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Product package TP comes from the supplier.Device displays Collector Emitter Breakdown (100V maximal voltage).

2SD1816T-H Features


the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 400mV @ 200mA, 2A
the supplier device package of TP

2SD1816T-H Applications


There are a lot of Rochester Electronics, LLC 2SD1816T-H applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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