2SD1816T-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2SD1816T-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TP
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
4A
Frequency - Transition
180MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.25000
$0.25
500
$0.2475
$123.75
1000
$0.245
$245
1500
$0.2425
$363.75
2000
$0.24
$480
2500
$0.2375
$593.75
2SD1816T-H Product Details
2SD1816T-H Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Product package TP comes from the supplier.Device displays Collector Emitter Breakdown (100V maximal voltage).
2SD1816T-H Features
the DC current gain for this device is 200 @ 500mA 5V the vce saturation(Max) is 400mV @ 200mA, 2A the supplier device package of TP
2SD1816T-H Applications
There are a lot of Rochester Electronics, LLC 2SD1816T-H applications of single BJT transistors.