MMBT2907AM3T5G Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As a result, the part has a transition frequency of 200MHz.As a result, it can handle voltages as low as 60V volts.When collector current reaches its maximum, it can reach 600mA volts.
MMBT2907AM3T5G Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
MMBT2907AM3T5G Applications
There are a lot of ON Semiconductor MMBT2907AM3T5G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
