SS9014DBU Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 1mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 140mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.A transition frequency of 270MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

SS9014DBU Features

the DC current gain for this device is 400 @ 1mA 5V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 270MHz

SS9014DBU Applications

There are a lot of ON Semiconductor SS9014DBU applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface