SS9014DBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SS9014DBU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
179mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
450mW
Terminal Position
BOTTOM
Current Rating
100mA
Frequency
270MHz
Base Part Number
SS9014
Number of Elements
1
Element Configuration
Single
Power Dissipation
450mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
270MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
400 @ 1mA 5V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
270MHz
Collector Emitter Saturation Voltage
140mV
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
Height
4.58mm
Length
4.58mm
Width
3.86mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.520078
$0.520078
10
$0.490640
$4.9064
100
$0.462868
$46.2868
500
$0.436668
$218.334
1000
$0.411951
$411.951
SS9014DBU Product Details
SS9014DBU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 1mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 140mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.A transition frequency of 270MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
SS9014DBU Features
the DC current gain for this device is 400 @ 1mA 5V a collector emitter saturation voltage of 140mV the vce saturation(Max) is 300mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is 100mA a transition frequency of 270MHz
SS9014DBU Applications
There are a lot of ON Semiconductor SS9014DBU applications of single BJT transistors.