PN200RM Overview

DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 20mA, 200mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.In extreme cases, the collector current can be as low as 500mA volts.

PN200RM Features

the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is -500mA

PN200RM Applications

There are a lot of ON Semiconductor PN200RM applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface