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BUJD105AD,118

  • BUJD105AD,118
  • BUJD105AD,118

BUJD105AD,118

BUJD105AD,118

WeEn Semiconductors

BUJD105AD,118 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJD105AD,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 13 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 4A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 8A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
7,500 $0.31185 $2.18295
BUJD105AD,118 Product Details

BUJD105AD,118 Overview


This device has a DC current gain of 13 @ 500mA 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 800mA, 4A.The device exhibits a collector-emitter breakdown at 400V.

BUJD105AD,118 Features


the DC current gain for this device is 13 @ 500mA 5V
the vce saturation(Max) is 1V @ 800mA, 4A

BUJD105AD,118 Applications


There are a lot of WeEn Semiconductors BUJD105AD,118 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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