MMBT4403LT1G Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -750mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).The part has a transition frequency of 200MHz.The breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT4403LT1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT4403LT1G Applications
There are a lot of ON Semiconductor MMBT4403LT1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
