MMBT4403LT3 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -750mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).In the part, the transition frequency is 200MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT4403LT3 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 200MHz
MMBT4403LT3 Applications
There are a lot of ON Semiconductor MMBT4403LT3 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
