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SS9011FBU

SS9011FBU

SS9011FBU

Rochester Electronics, LLC

SS9011FBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

SS9011FBU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
JESD-609 Code e3
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
JESD-30 Code O-PBCY-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 400mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 54 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 30mA
Transition Frequency 2MHz
Frequency - Transition 2MHz
RoHS StatusROHS3 Compliant
In-Stock:3908 items

SS9011FBU Product Details

SS9011FBU Overview


DC current gain in this device equals 54 @ 1mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 1mA, 10mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).

SS9011FBU Features


the DC current gain for this device is 54 @ 1mA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
a transition frequency of 2MHz

SS9011FBU Applications


There are a lot of Rochester Electronics, LLC SS9011FBU applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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