SS9011FBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
SS9011FBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
400mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
54 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
30mA
Transition Frequency
2MHz
Frequency - Transition
2MHz
RoHS Status
ROHS3 Compliant
SS9011FBU Product Details
SS9011FBU Overview
DC current gain in this device equals 54 @ 1mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 1mA, 10mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
SS9011FBU Features
the DC current gain for this device is 54 @ 1mA 5V the vce saturation(Max) is 300mV @ 1mA, 10mA a transition frequency of 2MHz
SS9011FBU Applications
There are a lot of Rochester Electronics, LLC SS9011FBU applications of single BJT transistors.