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MMBT6517LT3

MMBT6517LT3

MMBT6517LT3

ON Semiconductor

MMBT6517LT3 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT6517LT3 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 350V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MMBT6517
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
JEDEC-95 Code TO-236AB
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage 350V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
MMBT6517LT3 Product Details

MMBT6517LT3 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).In this part, there is a transition frequency of 40MHz.A maximum collector current of 100mA volts is possible.

MMBT6517LT3 Features


the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz

MMBT6517LT3 Applications


There are a lot of ON Semiconductor MMBT6517LT3 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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