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KSA1175YBU

KSA1175YBU

KSA1175YBU

Rochester Electronics, LLC

KSA1175YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

KSA1175YBU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Short Body
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Transition Frequency 180MHz
Frequency - Transition 180MHz
RoHS Status ROHS3 Compliant
KSA1175YBU Product Details

KSA1175YBU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 6V.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).As a result, the part has a transition frequency of 180MHz.The device has a 50V maximal voltage - Collector Emitter Breakdown.

KSA1175YBU Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 180MHz

KSA1175YBU Applications


There are a lot of Rochester Electronics, LLC KSA1175YBU applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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