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2SB1243TV2R

2SB1243TV2R

2SB1243TV2R

ROHM Semiconductor

2SB1243TV2R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1243TV2R Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case 3-SIP
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2004
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 260
Current Rating -3A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1243
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application SWITCHING
Gain Bandwidth Product 70MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
Collector Emitter Breakdown Voltage 80V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 3A
Transition Frequency 70MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) 5V
hFE Min 180
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.931235 $1.931235
10 $1.821920 $18.2192
100 $1.718792 $171.8792
500 $1.621502 $810.751
1000 $1.529719 $1529.719
2SB1243TV2R Product Details

2SB1243TV2R Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 500mA 3V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.The part has a transition frequency of 70MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

2SB1243TV2R Features


the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 70MHz

2SB1243TV2R Applications


There are a lot of ROHM Semiconductor 2SB1243TV2R applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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