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MPSA13ZL1G

MPSA13ZL1G

MPSA13ZL1G

ON Semiconductor

MPSA13ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSA13ZL1G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MPSA13
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 30V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 500mA
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.563072 $0.563072
10 $0.531200 $5.312
100 $0.501132 $50.1132
500 $0.472766 $236.383
1000 $0.446006 $446.006
MPSA13ZL1G Product Details

MPSA13ZL1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.A transition frequency of 125MHz is present in the part.As a result, it can handle voltages as low as 30V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

MPSA13ZL1G Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz

MPSA13ZL1G Applications


There are a lot of ON Semiconductor MPSA13ZL1G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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