PMBT2222AQAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMBT2222AQAZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
325mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
Frequency - Transition
340MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.283000
$0.283
10
$0.266981
$2.66981
100
$0.251869
$25.1869
500
$0.237612
$118.806
1000
$0.224163
$224.163
PMBT2222AQAZ Product Details
PMBT2222AQAZ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
PMBT2222AQAZ Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA
PMBT2222AQAZ Applications
There are a lot of Nexperia USA Inc. PMBT2222AQAZ applications of single BJT transistors.