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PMBT2222AQAZ

PMBT2222AQAZ

PMBT2222AQAZ

Nexperia USA Inc.

PMBT2222AQAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBT2222AQAZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 325mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 340MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.283000 $0.283
10 $0.266981 $2.66981
100 $0.251869 $25.1869
500 $0.237612 $118.806
1000 $0.224163 $224.163
PMBT2222AQAZ Product Details

PMBT2222AQAZ Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.

PMBT2222AQAZ Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA

PMBT2222AQAZ Applications


There are a lot of Nexperia USA Inc. PMBT2222AQAZ applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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