2SB1132T100R Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 100mA 3V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 32V volts.The maximum collector current is 1A volts.

2SB1132T100R Features

the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz

2SB1132T100R Applications

There are a lot of ROHM Semiconductor 2SB1132T100R applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter