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BFN19H6327XTSA1

BFN19H6327XTSA1

BFN19H6327XTSA1

Rochester Electronics, LLC

BFN19H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BFN19H6327XTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PG-SOT89
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
6,000 $0.14296 $0.85776
BFN19H6327XTSA1 Product Details

BFN19H6327XTSA1 Overview


In this device, the DC current gain is 30 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).Supplier package PG-SOT89 contains the product.There is a 300V maximal voltage in the device due to collector-emitter breakdown.

BFN19H6327XTSA1 Features


the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the supplier device package of PG-SOT89

BFN19H6327XTSA1 Applications


There are a lot of Rochester Electronics, LLC BFN19H6327XTSA1 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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