BFN19H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BFN19H6327XTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
PG-SOT89
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6,000
$0.14296
$0.85776
BFN19H6327XTSA1 Product Details
BFN19H6327XTSA1 Overview
In this device, the DC current gain is 30 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).Supplier package PG-SOT89 contains the product.There is a 300V maximal voltage in the device due to collector-emitter breakdown.
BFN19H6327XTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA the supplier device package of PG-SOT89
BFN19H6327XTSA1 Applications
There are a lot of Rochester Electronics, LLC BFN19H6327XTSA1 applications of single BJT transistors.