MMBTA64LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.The part has a transition frequency of 125MHz.A maximum collector current of 500mA volts can be achieved.
MMBTA64LT3G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
MMBTA64LT3G Applications
There are a lot of ON Semiconductor MMBTA64LT3G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
