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MMBTA92LT1

MMBTA92LT1

MMBTA92LT1

ON Semiconductor

MMBTA92LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBTA92LT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MMBTA92
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Power - Max 225mW
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1mA 10V
Current - Collector Cutoff (Max) 250nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -300V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.03000 $0.03
500 $0.0297 $14.85
1000 $0.0294 $29.4
1500 $0.0291 $43.65
2000 $0.0288 $57.6
2500 $0.0285 $71.25
MMBTA92LT1 Product Details

MMBTA92LT1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1mA 10V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 50MHz.Collector current can be as low as 500mA volts at its maximum.

MMBTA92LT1 Features


the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz

MMBTA92LT1 Applications


There are a lot of ON Semiconductor MMBTA92LT1 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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